Archive for the ‘DRAM’ Category

Living in a Material World – EuroAsia Semiconductor

October 12th, 2011

With the Autumn/Fall leaves starting to fall, at least for those of us in the Northern Hemisphere, Issue IV 2011 of    the quarterly and rather magnificent EuroAsia Semiconductor is published.

The current issue features a cover and in-depth lead article from Geoff Irvine and Xiaohong Chen.  The topics discussed include developments  in the semiconductor market that reinforce the importance of strategic and highly collaborative partnerships to meet challenges around the introduction of new materials for future technology. The article also looks at the future memory developments and what we might see in coming iterations of semiconductor devices.

So, make some warm cocoa, hunker down and read the online version by clicking here.

Posted in CMOS, DRAM, Industry Commentary, Materials, Memory, R&D, Silicon Semiconductors | No Comments »

SEMI speculates on the end of DRAM

October 4th, 2011

SEMI published some interesting data October 1 that announced that, for the first time, industry spending on Flash memory has exceeded spending on DRAM.  “From 2004-2007, DRAM accounted for 30-35% of semiconductor capital equipment spending, according to the SEMI World Fab Database” writes Clark Tseng, SEMI Industry Research and Statistics, Taiwan. “However, in the last few years, the DRAM sector has been suffering from fast price erosion, fierce competition and mediocre demand.”

Read the rest of this entry »

Posted in DRAM, Industry Commentary, Memory, SEMI | No Comments »

C&EN part two: Materials Enable Memory Advances

July 26th, 2011

In the second article featuring SAFC Hitech in C&EN’s electronic materials-led July 11 issue, CTO Ravi Kanjolia talks to Jean-Francois Tremblay about how innovations in electronic materials is fundamental to the ongoing evolution of emerging semiconductor architectures. As device geometries shrink and performance increases, so ‘traditional” memory types, such as DRAM, and storage architectures such as NOR and NAND Flash are reaching their physical limitations, and new memory architectures are being developed. Read the rest of this entry »

Posted in Chemistry, DRAM, Industry Commentary, Materials, Memory, R&D | No Comments »

Geoff Irvine talks high-k materials

June 6th, 2011

The successful integration of new precursor materials into a wafer fabrication process is one of the key challenges facing semi manufacturers.  Executed correctly and successfully optimized, new materials solutions are fuelling the rapid deployment of advanced technologies, which are enabling increasingly powerful and efficient end user devices.  At the forefront of this materials innovation, SAFC Hitech is applying its years of expertise to evolve current technologies, ensuring that a sustainable framework for the adoption of future technology nodes is translated from theory into reality.

In an article published at the end of February 2011 at Electro IQ, SAFC Hitech’s VP of Business Development, Dr. Geoff Irvine, talks about the introduction of high-k materials to the silicon semi space from a material supplier’s perspective, and how the development of precursors is tied to the evolution of deposition techniques and the materials used in DRAM devices.  Looking ahead, the article examines some of the challenges that face the semi industry, particularly those relating the next generation of high-k and ultra high-k materials.

Read the full article here:

Posted in Chemistry, DRAM, high-k, Industry Commentary, Market Analysis, Materials, Memory, R&D, Silicon Semiconductors | No Comments »

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